Zejie Yu 1,3,4,*He Gao 1Yi Wang 2Yue Yu 2[ ... ]Daoxin Dai 1,3,4,5
Author Affiliations
Abstract
1 Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310058, China
2 Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, China
3 Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Jiaxing 314000, China
4 Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing 314000, China
5 Ningbo Research Institute, Zhejiang University, Ningbo 315100, China
Photonic waveguides are the most fundamental element for photonic integrated circuits (PICs). Waveguide properties, such as propagation loss, modal areas, nonlinear coefficients, etc., directly determine the functionalities and performance of PICs. Recently, the emerging waveguides with bound states in the continuum (BICs) have opened new opportunities for PICs because of their special properties in resonance and radiation. Here, we review the recent progress of PICs composed of waveguides with BICs. First, fundamentals including background physics and design rules of a BIC-based waveguide will be introduced. Next, two types of BIC-based waveguide structures, including shallowly etched dielectric and hybrid waveguides, will be presented. Lastly, the challenges and opportunities of PICs with BICs will be discussed.
photonic waveguide bound states in the continuum integrated photonics 
Journal of Semiconductors
2023, 44(10): 101301
Author Affiliations
Abstract
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
The monolithic integration of Fabry-Perot cavities has many applications, such as label-free sensing, high-finesse filters, semiconductor lasers, and frequency comb generation. However, the excess loss of integrated reflectors makes it challenging to realize integrated Fabry-Perot cavities working in the ultrahigh-Q regime (>106). Here, we propose and experimentally demonstrate what we believe is the first silicon integrated million-Q Fabry-Perot cavity. Inspired by free-space optics, a novel monolithically integrated retroreflector is utilized to obtain near-unity reflectance and negligible reflection losses. The corner scattering in the retroreflector is prevented by the use of the TE1 mode, taking advantage of its zero central field intensity. Losses incurred by other mechanisms are also meticulously engineered. The measurement results show resonances with an ultrahigh intrinsic Q factor of 3.4×106 spanning an 80-nm bandwidth. The measured loaded Q factor is 2.1×106. Ultralow reflection losses (0.05 dB) and propagation losses (0.18 dB/cm) are experimentally realized.
Photonics Research
2022, 10(11): 2549
Author Affiliations
Abstract
1 Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China
2 Department of Biomedical Engineering, The Chinese University of Hong Kong, Hong Kong, China
Integrated spectrometers with both wide optical bandwidths and high spectral resolutions are required in applications such as spectral domain optical coherence tomography (SD-OCT). Here we propose a compact integrated scanning spectrometer by using a tunable micro-ring resonator (MRR) integrated with a single arrayed waveguide grating for operation in the 1265–1335-nm range. The spectral resolution of the spectrometer is determined by the quality factor of the MRR, and the optical bandwidth is defined by the free spectral range of the arrayed waveguide grating. The spectrometer is integrated with on-chip germanium photodetectors, which enable direct electrical readout. A 70-nm optical bandwidth and a 0.2-nm channel spacing enabled by scanning the MRR across one free spectral range are demonstrated, which offer a total of 350 wavelength channels with 31-kHz wavelength scanning speed. The integrated spectrometer is applied to measure different spectra and the interference signals from an SD-OCT system, which shows its great potential for future applications in sensing and imaging systems.
Photonics Research
2022, 10(5): 05000A74
Author Affiliations
Abstract
1 Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan
2 Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo 113-0033, Japan
3 Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, China
4 Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
5 e-mail: goda@chem.s.u-tokyo.ac.jp
Mid-infrared (MIR) integrated photonics has attracted broad interest due to its promising applications in biochemical sensing, environmental monitoring, disease diagnosis, and optical communication. Among MIR integration platforms, germanium-based platforms hold many excellent properties, such as wide transparency windows, high refractive indices, and high nonlinear coefficients; however, the development of MIR germanium photonic devices is still in its infancy. Specifically, MIR high-Q germanium resonators with comparable performance to their silicon counterparts remain unprecedented. Here we experimentally demonstrate an MIR germanium nanocavity with a Q factor of 18,000, the highest-to-date of reported nanocavities across MIR germanium-based integration platforms. This is achieved through a combination of a feasible theoretical design, Smart-Cut methods for wafer development, and optimized device fabrication processes. Our nanocavity, with its high Q factor and ultrasmall mode volume, opens new avenues for on-chip applications in the MIR spectral range.
Infrared Integrated optics materials Photonic crystals Integrated optics devices 
Photonics Research
2018, 6(9): 09000925
Author Affiliations
Abstract
1 Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong, China
2 Department of Electronic and Information Engineering, Shenzhen Graduate School,Harbin Institute of Technology, Shenzhen, China
A quasi-two-dimensional layer of MoS2 was placed on top of a silicon optical waveguide to form a MoS2–silicon hybrid structure. Chirped pulse self-phase modulation measurements were carried out to determine the optical Kerr nonlinearity of the structure. The observed increase in the spectral broadening of the optical pulses in the MoS2–silicon waveguide compared with the silicon waveguides indicated that the third-order nonlinear effect in MoS2 is about 2 orders of magnitude larger than that in silicon. The measurements show that MoS2 has an effective optical Kerr coefficient of about 1.1 × 10?16 m2∕W. This work reveals the potential application of MoS2 to enhance the nonlinearity of hybrid silicon optical devices.
Nonlinear optics Nonlinear optics Kerr effect Kerr effect Nonlinear optics Nonlinear optics materials materials Nonlinear optical materials Nonlinear optical materials 
Photonics Research
2015, 3(5): 05000206
Author Affiliations
Abstract
1 Nippon Telegraph and Telephone Corporation, 3-1, Morinosato-Wakamiya, Atsugi 243-0198, Japan
2 Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
3 Consorzio Nazionale Interuniversitario per le Telecomunicazioni via Moruzzi 1, 56124 Pisa, Italy
4 The Chinese University of Hong Kong, Shatin, N.T., Hong Kong
Integrated optics Integrated opticsmaterials Optoelectronics 
Photonics Research
2014, 2(3): 03000GP1

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